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Old 11-01-17, 02:07 PM   #295
yung23
made Damon Lindelof say "Fermions" on TV :P
Hears the Whispers
 
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Join Date: Nov 2005
Location: trapped in an inner product space containing a lattice
Posts: 12,037
Re: What are your thoughts ? REAL WORLD MIND READING

I'm going to do a summary, yet again this weekend.

I need the public, the real public, to realize the connections here.
It is becoming VERY clear now.


Its all about
NANODIAMONDs

which contain
NITROGEN VACANCIES

WHICH MADE MACROSCOPIC ENTANGLEMENT POSSIBLE
http://advances.sciencemag.org/conte.../e1501015.full
https://www.nature.com/articles/nphys2545
(ignore the fleeting coherence times for now, we have come a long way since this, and coherence CAN be recovered by QEC)
(because, NV centers are ANCILLAS and hold values which can be recovered upon "error")


NV CENTERS can also be used as
QUANTUM SPIN PROBES, QUBITS & AS, ANCILLAS

in devices such as
BIOMEMs scanners
QUANTUM REPEATERS
PHOTONIC NETWORKING

and..

MEMRISTORS.. where the vacancies are used for switching between inhibited and excited states, thus simulating NEURONS


MEMRISTORS utilize wavefunctions.


Wavefunctions can be weakly measured by ANCILLAS

ANCILLAS hold "values" ie : wavefunctions

and have GROUND STATES


which measured particles are "cooled" into for measurement techniques. a literal form of "photon counting"..

"This de-excitation is called ‘fluorescence’, and it is characterized by a
lifetime of a few nanoseconds of the lowest vibrational level of the first excited state.
De-excitation from the excited singlet state to the ground state also occurs by other mechanisms, such as non-radiant thermal decay or ‘phosphorescence’. In the latter case, the chromophore undergoes a forbidden transition from the excited singlet state into the triplet state (intersystem crossing, ISC, Fig 2.4), which has a non-zero probability, for example because of spin orbit coupling of the electrons’ magnetic moments"



its a type of INTERSYSTEM CROSSING


doing a search for Intersystem crossing, memristor brings up this link..

http://ieeexplore.ieee.org/document/1548904/




which does not include the word memristor, but IS about optical microcavities.. which is what Nitrogen vacancies are


https://www.ncbi.nlm.nih.gov/pubmed/19253996

A composite optical microcavity, in which nitrogen vacancy (NV) centers in a diamond nanopillar are coupled to whispering gallery modes in a silica microsphere, is demonstrated. Nanopillars with a diameter as small as 200 nm are fabricated from a bulk diamond crystal by reactive ion etching and are positioned with nanometer precision near the equator of a silica microsphere. The composite nanopillar-microsphere system overcomes the poor controllability of a nanocrystal-based microcavity system and takes full advantage of the exceptional spin properties of NV centers and the ultrahigh quality factor of silica microspheres.




and here we find "whispering gallery modes with ANCILLAS

Quote:
Experimental investigation of the no-signalling principle in parity–time ...

www.nature.com › Home › archive › issue › Letter
Full size image (231 KB) ... The labels a and b represent the ancilla path states. ... voltage level of the driving electrical pulse (Vo, generated by QRPG) to the half-wave voltage (Vπ). ..... Parity–time-symmetric whispering-gallery microcavities.
and here is all three
Whispering gallery Mode
Microresonator and ANCILLA

https://journals.aps.org/pra/abstrac...RevA.90.052310
Quote:
Universal hybrid three-qubit quantum gates assisted by a nitrogen-vacancy center coupled with a whispering-gallery-mode microresonator

Quote:
We investigate the construction of two universal three-qubit quantum gates in a hybrid system. The designed system consists of a flying photon and a stationary negatively charged nitrogen-vacancy (NV) center fixed on the periphery of a whispering-gallery-mode (WGM) microresonator, with the WGM cavity coupled to tapered fibers functioning as an add-drop structure. These gate operations are accomplished by encoding the information both on the spin degree of freedom of the electron confined in the NV center and on the polarization and spatial-mode states of the flying photon, respectively
Now Somewhere in this is evidence of a memristor holding a wavefunction

https://www.researchgate.net/publica...istor_Modeling

Quote:
The shown SPICE implementation (macro model) for a
charge controlled memristor model exactly reproduces the
results from [2]. However, these simulation results do not
have a good compliance - not even qualitatively - with the
characteristic form of I/V curves of manufactured devices.
Therefore the following equations (3) to (9) try to approach
memristor modeling from a different point of view to get a
closer match to the measured curves from [2],[6],[7],[8],[10]
or [11] even with a simple linear drift of w.
Besides the charge steering mechanism of a memristor modelled in [2],
[1] also defined a functional relationship for a memristor
which explains the memristive behavior in dependence on its
magnetic flux: i(t) = W φ(t) v(t) . (3)

Variable W (φ) represents the memductance which is the
reciprocal of memristance M. Here a mechanism is demanded
that maps the magnetic flux as the input signal to the current
that is flowing through the memristor. The magnetic flux φ
is the integral of voltage v(t) over time: φ = R v(t) dt.
We can assume that an external voltage which is applied to
the previously described two-layer structure has an influence
on the movable 2+-dopants over time. The width w(t) of
the semiconductor layer is depending on the velocity of the
dopants vD(t) via the time integral:
w(t) = w0 + Z0t vD(τ)dτ . (4)

The drift velocity vD in an electric field E is defined via its
mobility D: vD(t) = D E(t) (5) and the electric field E is connected with the voltage via E(t) = v(t)
D(6)with D denoting the total thickness of the two-layer structure
(D = tOX + tSEMI). Due the good conductance of the
semiconductor layer the electric field is applied to the time
depending thickness of the insulator layer tOX for the most
part (due to v(l) = R E dl). However, this was neglected for
reasons of simplification. If we combine (4), (5) and (6), we
obtain: n(t) = w0 + DD Z0t v(τ)dτ = w0 + DD φ(t) . (7)

This equation shows a proportional dependence of the width w
from the magnetic flux φ. Since the thickness of the insulator
layer is in the low nanometer region a tunnel current or
equivalent mechanism is possible. The magnetic flux slightly
decreases the thickness of the insulator layer wich is the barrier
for the tunnel current. This current rises exponentially with a
reduction of the width tOX(φ) (the exponential dependence

is deducible from the quantum mechanic wave function)

which musr become the GROUND STATE of the ANCILLA upon no-classical correlation..
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Last edited by yung23; 12-01-17 at 02:14 PM.
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