I'm going to do a summary, yet again this weekend.
I need the public, the real public, to realize the connections here.
It is becoming VERY clear now.
Its all about
NANODIAMONDs
which contain
NITROGEN VACANCIES
WHICH MADE MACROSCOPIC ENTANGLEMENT POSSIBLE
http://advances.sciencemag.org/conte.../e1501015.full
https://www.nature.com/articles/nphys2545
(ignore the fleeting coherence times for now, we have come a long way since this, and coherence CAN be recovered by QEC)
(because, NV centers are ANCILLAS and hold values which can be recovered upon "error")
NV CENTERS can also be used as
QUANTUM SPIN PROBES, QUBITS & AS, ANCILLAS
in devices such as
BIOMEMs scanners
QUANTUM REPEATERS
PHOTONIC NETWORKING
and..
MEMRISTORS.. where the vacancies are used for switching between inhibited and excited states, thus simulating NEURONS
MEMRISTORS utilize wavefunctions.
Wavefunctions can be weakly measured by ANCILLAS
ANCILLAS hold "values" ie : wavefunctions
and have GROUND STATES
which measured particles are "cooled" into for measurement techniques. a literal form of "photon counting"..
"This deexcitation is called ‘fluorescence’, and it is characterized by a
lifetime of a few nanoseconds of the lowest vibrational level of the first excited state.
Deexcitation from the excited singlet state to the ground state also occurs by other mechanisms, such as nonradiant thermal decay or ‘phosphorescence’. In the latter case, the chromophore undergoes a forbidden transition from the excited singlet state into the triplet state (intersystem crossing, ISC, Fig 2.4), which has a nonzero probability, for example because of spin orbit coupling of the electrons’ magnetic moments"
its a type of INTERSYSTEM CROSSING
doing a search for Intersystem crossing, memristor brings up this link..
http://ieeexplore.ieee.org/document/1548904/
which does not include the word memristor, but IS about optical microcavities.. which is what Nitrogen vacancies are
https://www.ncbi.nlm.nih.gov/pubmed/19253996
A composite optical microcavity, in which nitrogen vacancy (NV) centers in a diamond nanopillar are coupled to whispering gallery modes in a silica microsphere, is demonstrated. Nanopillars with a diameter as small as 200 nm are fabricated from a bulk diamond crystal by reactive ion etching and are positioned with nanometer precision near the equator of a silica microsphere. The composite nanopillarmicrosphere system overcomes the poor controllability of a nanocrystalbased microcavity system and takes full advantage of the exceptional spin properties of NV centers and the ultrahigh quality factor of silica microspheres.
and here we find "whispering gallery modes with ANCILLAS
and here is all three
Whispering gallery Mode
Microresonator and ANCILLA
https://journals.aps.org/pra/abstrac...RevA.90.052310
Quote:
Universal hybrid threequbit quantum gates assisted by a nitrogenvacancy center coupled with a whisperinggallerymode microresonator
Quote:
We investigate the construction of two universal threequbit quantum gates in a hybrid system. The designed system consists of a flying photon and a stationary negatively charged nitrogenvacancy (NV) center fixed on the periphery of a whisperinggallerymode (WGM) microresonator, with the WGM cavity coupled to tapered fibers functioning as an adddrop structure. These gate operations are accomplished by encoding the information both on the spin degree of freedom of the electron confined in the NV center and on the polarization and spatialmode states of the flying photon, respectively


Now Somewhere in this is evidence of a memristor holding a wavefunction
https://www.researchgate.net/publica...istor_Modeling
Quote:
The shown SPICE implementation (macro model) for a
charge controlled memristor model exactly reproduces the
results from [2]. However, these simulation results do not
have a good compliance  not even qualitatively  with the
characteristic form of I/V curves of manufactured devices.
Therefore the following equations (3) to (9) try to approach
memristor modeling from a different point of view to get a
closer match to the measured curves from [2],[6],[7],[8],[10]
or [11] even with a simple linear drift of w.
Besides the charge steering mechanism of a memristor modelled in [2],
[1] also defined a functional relationship for a memristor
which explains the memristive behavior in dependence on its
magnetic flux: i(t) = W φ(t) · v(t) . (3)
Variable W (φ) represents the memductance which is the
reciprocal of memristance M. Here a mechanism is demanded
that maps the magnetic flux as the input signal to the current
that is flowing through the memristor. The magnetic flux φ
is the integral of voltage v(t) over time: φ = R v(t) dt.
We can assume that an external voltage which is applied to
the previously described twolayer structure has an influence
on the movable 2+dopants over time. The width w(t) of
the semiconductor layer is depending on the velocity of the
dopants vD(t) via the time integral:
w(t) = w0 + Z0t vD(τ)dτ . (4)
The drift velocity vD in an electric field E is defined via its
mobility µD: vD(t) = µD · E(t) (5) and the electric field E is connected with the voltage via E(t) = v(t)
D(6)with D denoting the total thickness of the twolayer structure
(D = tOX + tSEMI). Due the good conductance of the
semiconductor layer the electric field is applied to the time
depending thickness of the insulator layer tOX for the most
part (due to v(l) = R E dl). However, this was neglected for
reasons of simplification. If we combine (4), (5) and (6), we
obtain: n(t) = w0 + µDD· Z0t v(τ)dτ = w0 + µDD · φ(t) . (7)
This equation shows a proportional dependence of the width w
from the magnetic flux φ. Since the thickness of the insulator
layer is in the low nanometer region a tunnel current or
equivalent mechanism is possible. The magnetic flux slightly
decreases the thickness of the insulator layer wich is the barrier
for the tunnel current. This current rises exponentially with a
reduction of the width tOX(φ) (the exponential dependence
is deducible from the quantum mechanic wave function)

which musr become the GROUND STATE of the ANCILLA upon noclassical correlation..